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Ordering number : ENA1315A
EMH2412
N-Channel Power MOSFET
24V, 6A, 27m Ω , Dual EMH8
Features
http://onsemi.com
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Low ON-resistance
Best suited for LiB charging and discharging switch
Common-drain type
2.5V drive
Halogen free compliance
Protection diode in
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
24
±12
6
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
IDP
PD
PT
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (900mm 2 × 0.8mm) 1unit
When mounted on ceramic substrate (900mm 2 × 0.8mm)
60
1.3
1.4
150
--55 to +150
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7045-006
Product & Package Information
? Package : EMH8
? JEITA, JEDEC : -
? Minimum Packing Quantity : 3,000 pcs./reel
8
0.2
5
0.125
EMH2412-TL-H
Taping Type : TL
Marking
LM
TL
LOT No.
1
0.5
4
2.0
1 : Source1
2 : Gate1
Electrical Connection
3 : Source2
8
7
6
5
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
EMH8
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
53012 TKIM/91008PE TI IM TC-00001579 No. A1315-1/7
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